Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)
Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)

Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)

München Vollzeit 72000 - 84000 € / Jahr (geschätzt) Kein Home Office möglich
IC Resources

Social network you want to login/join with:Senior Principal Engineer in Power Semiconductor Devices – (SiC/GaN/Si), MunichClient: ic resourcesLocation:Job Category: Other-EU work permit required: YesJob Reference:5c6b193fbaf8Job Views:4Posted:27.06.2025Expiry Date:11.08.2025Job Description:We are seeking a talented Senior Principal Device Engineer to join our client\’s team in Nuremberg.In this role, you will play a key part in developing and improving our future generation of Power Device products such as SiC, GaN and Si.Using TCAD software, you will be responsible for creating simulations to develop and optimize semiconductor process technologies and devices.As a Principal Senior Device Engineer, your main responsibilities will include:Designing SiC devices using TCAD from concept to simulationDemonstrating a deep understanding of the fundamental device physics and architecture of SiC or GaN technologyCollaborating with production and development teamsProviding technical expertise and innovative ideasDebugging device-related issues and proposing effective solutionsUnderstanding the fundamental requirements for devices and engaging stakeholdersThe ideal candidate will have a degree in Electronics Engineering, Physics, or a related field and a proven track record in the following:Experience in using TCAD and layout toolsDeep knowledge of device physics, structure, electrical operations, fab process & packaging of power technologiesExperience with device analysis and failure analysisUnderstanding of the challenges involved in developing Power Devices, including participating in risk analysisAbility to support planning, organizing, and controlling of projects while adhering to plans and budgets, as well as reporting on progressStrong collaboration skills, whether working within an immediate team or outside of R&DIf you are interested in this Principal Senior Device Engineer role, please apply with an up-to-date CV and contact information. #J-18808-Ljbffr

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Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)
IC Resources
IC Resources
  • Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)

    München
    Vollzeit
    72000 - 84000 € / Jahr (geschätzt)

    Bewerbungsfrist: 2027-07-03

  • IC Resources

    IC Resources

    50 - 100
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