Overview
In this role you will advance GaN technology platforms for high-performance power electronics, moving concepts into pilot and high-volume production. You will work with device, process integration and reliability teams to improve performance, yield and manufacturability. You will design experiments, analyse data and conduct root-cause investigations to tackle reliability and process challenges. The role offers cross-functional collaboration across international teams and opportunities to shape next-generation GaN devices and manufacturing processes. This is a hands-on, impact-driven position at a leading GaN technology group.
Verantwortungsbereiche
- Drive development and optimisation of GaN technology platforms for power semiconductor applications
- Design, execute and analyse development experiments using Design of Experiments (DOE) methodologies
- Develop and improve process flows, device architectures and fabrication modules to enhance device performance and manufacturability
- Perform electrical characterization and data analysis to evaluate device behaviour, reliability and yield performance
- Investigate process and device-related challenges through root cause analysis and failure analysis techniques
- Collaborate closely with process integration, device engineering, reliability, product engineering and manufacturing teams
- Support qualification activities and the industrialisation of new technologies
- Transfer new GaN technologies from R&D into pilot and high-volume manufacturing environments
- Define test structures and characterisation methodologies to accelerate technology learning cycles
- Contribute to continuous improvement initiatives related to yield, reliability and process capability
- Document development results and communicate findings to technical stakeholders across international teams
Zentrale Anforderungen
- MSc or PhD in Electrical Engineering, Physics, Materials Science, Microelectronics or a related discipline
- Experience in semiconductor technology development, process development or process integration
- Understanding of GaN, III-V, power semiconductor or wide bandgap technologies
- Knowledge of semiconductor fabrication processes including lithography, etch, deposition, metallisation and passivation
- Experience performing electrical characterisation and data analysis
- Familiarity with statistical methods and DOE approaches
- Strong problem-solving skills and ability to work in multidisciplinary development environments
- Excellent communication skills in an international setting
- strong problem-solving abilities
- effective communication in international settings
- multidisciplinary collaboration
- GaN technology development
- III-V and wide bandgap semiconductors
- power semiconductor fabrication processes (lithography, etch, deposition, metallisation, passivation)
GaN Technology Development Engineer (M/F/D) in Karlsruhe Arbeitgeber: DSJ Global
Als international tätiges Industrieunternehmen im Automotive-Umfeld bieten wir Ihnen die Möglichkeit, in einer verantwortungsvollen Schlüsselposition aktiv an der Weiterentwicklung globaler HSE-Standards mitzuwirken. Unsere Unternehmenskultur fördert Zusammenarbeit und Innovation, während wir Ihnen attraktive Vergütung und umfangreiche Zusatzleistungen sowie langfristige Entwicklungsperspektiven in einem dynamischen, internationalen Umfeld bieten.
