Shape the future: Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover
Creativity: Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms
Data is everything: Optimization of device performance and reliability as well as development of required characterization methods
Stakeholder management: Coordination with project management, process development, characterization, product design and customers
Teamwork makes the dream work: Collaboration within an international multi-site environment
Take responsibility: Advancement of RF-GaN/Si device technology development with a focus on high-performance applications
Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics
Work experience: You bring more than 10 years of experience in GaN device technology development
Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset
Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward
Skills: You possess in-depth GaN device knowledge for RF applications as well as a strong background in semiconductor physics and technology
Languages: You communicate confidently in English and can present complex topics effectively
We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity. Our hiring decisions are based on skills and experience. Even if you don't meet every requirement, we encourage you to apply. Please let your recruiter know if you need any accommodations during the interview process. Learn more about our various contact channels and about Diversity & Inclusion at Infineon.
Franziska Mantei https://www.linkedin.com/in/franziska-m-5057582/
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Lead Principal Engineer Device Development RF-GaN (w/m/div) in Regensburg Arbeitgeber: Infineon Technologies AG
Infineon ist ein hervorragender Arbeitgeber, der seinen Mitarbeitern die Möglichkeit bietet, an innovativen Lösungen für die Automobilindustrie zu arbeiten. Mit einem starken Fokus auf Teamarbeit und persönlichem Wachstum fördert das Unternehmen eine unterstützende Arbeitskultur, in der Neugier und Eigenverantwortung geschätzt werden. Zudem profitieren Mitarbeiter von internationalen Projekten und der Chance, ihre technischen Fähigkeiten kontinuierlich auszubauen, während sie in einem dynamischen und zukunftsorientierten Umfeld tätig sind.
