Doctoral Thesis: Characterization and Modeling of Power GaN Gate Injection Transistors (GIT) (f/m/div)

<![CDATA[ The industrial doctorate at Infineon: Pursue a doctoral degree at a university and gain professional experience simultaneously – an ideal start for your career. Advance your research with us and profit from our vast network of doctoral candidates and the expertise of a university. Mentorship is handled by both professors and dedicated Infineon employees.
We are offering a doctoral thesis dealing with Gallium Nitride (GaN) high electron mobility transistors. This kind of transistor has gathered significant attention in recent years due to its exceptional thermal properties, high-temperature operation, high current density, high frequency, and low cost compared to other devices like Silicon Carbide. These advantages make GaN an ideal material for power applications.
The doctoral work will be focused on the detailed characterization and modeling of GaN gate injection transistors (GIT). This involves comprehensive test-chip development, measurement, characterization, model equation development, and parameter extraction. Your work will contribute significantly to the advancement of high-power semiconductor applications.
The research is carried out in cooperation with a leading university.

Job Description
The tasks within the thesis will consist of:

• Technical Collaboration: Serve as the primary technical liaison within the modeling group, engaging with technology development and product design teams.
• Device Measurement: Conduct extensive measurements of GaN GITs, utilizing advanced probe systems and vector network analyzers to capture DC, AC, pulsed, and high-frequency characteristics.
• Model Development: Extend existing models and develop new approaches for compact modeling of GaN GITs, incorporating effects such as hole injection and trapping. Implement these models in Verilog-A and integrate with the ASM-HEMT CMC compact model.
• Data Analysis: Analyze measurement data to extract critical device parameters. Utilize and improve existing Python/PEL codes for automated data extraction and analysis.
• Model Validation: Validate models using ICCAP and ADS, ensuring accuracy across various configurations and temperatures, and documenting results for internal and external publications.
• Machine Learning Integration: Apply machine learning techniques to enhance trap parameter extraction and data analysis processes.
• Project Reporting: Documenting the results for internal use and create the required reports for the research project.
• Research Publication: Publishing relevant scientific results at international technical conferences and journal.

The learnings out of the thesis will lead to:

• A comprehensive physical model of GaN GITs, with a particular focus on trapping, hole injection, and current collapse. This enables accurate predictions of device behavior and allows the design of new, innovative GaN products.

Your Profile
A doctoral student is a research enthusiast,
…whose interests are scientific research combined with the passion for Infineon’s innovative products and applications.
…who enjoys working in an industrial environment in combination with an Infineon partner university.
…who appreciates open communication and the contribution of an international environment.
…and is thus an excellent candidate for a further academic or industrial career after completion of their thesis.

As the ideal candidate you:

• Are eligible for full-time PhD studies and holds a master’s degree in physics, electrical engineering, or a related field
• Are highly motivated and eager to gain an in-depth understanding of GaN HEMT device physics
• Have first experience in laboratory activities and are willing to bring it to the next level
• Possesses initial experience in laboratory activities and is keen to advance these skills
• Already have some experience in device modeling and characterization
• Have good oral and written communication skills in English

Know-how in following topics is preferable – but not mandatory

• Strong understanding of semiconductor device physics, particularly GaN HEMT transistors.
• Familiarity with circuit simulation using SPICE-like simulators and TCAD tools (e.g., Silvaco, Sentaurus)
• Proficiency in programming languages such as Python and/or Matlab; knowledge of Verilog-A is a plus.

Contact:
Sophia Dechant

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