GaN Process Development Engineer in Dresden

X-FAB is looking for a GaN / Wide Band Gap device and process development engineer to join our global Process Development team, in Dresden, Germany, but working as part of an international organization developing Wide Band Gap technologies.

Your pitch:

• Development of GaN / Wide Band Gap semiconductor devices and processes.
• Define semiconductor process flows and device architectures.
• TCAD simulation of devices and processes.
• Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.
• Development and design of test structures.
• Electrical characterization of GaN / Wide Band Gap devices.
• Process integration and cooperation with other departments within X-FAB.
• Offer technical support to customers.
• Cooperation with external partners.
• Management of development projects, working in interdisciplinary and international teams.

Your profile:

• Master’s degree in the field of electrical engineering, microelectronics or related fields.
• Minimum 3 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices.
• Experience with GaN / Wide Band Gap wafer processes.
• Experience in the development environment for the automotive industry is desirable.
• Enjoy teamwork in a multicultural work environment.
• Interest in the development of modern semiconductor devices with the highest quality standards.
• Project management experience.
• Strong communication skills in an international environment.

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